Ukufaka kwedijithali
- Ibhodi yeTheminali
- Iinqabo zokuphepha ezihlukanisiweko
- Iinsetjenziswa ezihlukanisako zesiginali
- Iinsetjenziswa zokuvikela ama-Surge
- Iinsetjenziswa zokuphepha
- Amamojula we-I/O ahlakaniphileko ahlukileko
- Amasango ahlakaniphileko
- Iinsetjenziswa ze-Optical Data yezebubulo
- Iinhlaziyi ze-Inthanethi ze-Dew Point
- Amamojula wokuthola idatha
- Umtjhugululi wedatha we-HART
PHD-12TF-288
Ukuhlolisisa
Isithiyo sokuphepha esihlukileko ehlangothini lokuthola: i-PHD-12TF-288, ukufakwa nokukhipha kwedijithali, ukufakwa okukodwa nokukhipha okubili.
^ Isithiyo esihlukanisiweko singatjhugulula iswitshi yokutjhidelana nokufaka kokuthintana endaweni eyingozi kube siginali yokukhipha ye-transistor bese idlulisela endaweni ephephileko. I-transistor yokukhipha hlangana ne-ec ifakwe iswitjhi yokukhetha "isigaba esiphendukileko/isigaba esijayelekileko", ngaphezu kwalokho, kunesekethe esifitjhani sesiginali yokufaka nofana isibonisi se-alamu yesekhethi evulekileko, isekhethi inikela ngokuphakelwa kwamandla wesensa yokufaka.
^ Umkhiqizo lo udinga umthombo wamandla wangaphandle we-20-35VDC.
^ Isitjengiso sesimo sesiginali sisethwe emkhanyweni obomvu nophuzi ukutjengisa ubujamo bokusebenza kwe-relay yokukhipha, lokha nayizokuthusa khona-ke ukukhanya kuba bomvu, ngesikhathi sokusebenza okujayelekileko ukukhanya kuba mthubi.
* Umthombo wamandla webhasi, sibawa uqale isithasiselo ukuthola imininingwana.
| Ivoltheji yokuphakela | 20~35VDC, ukusetjenziswa kwamandla |
| Isiginali yokufaka | Tjhugulula ukuthintana/ukutjhidela |
| Ivoltheji yokuphakela ukusuka ehlangothini lesensa endaweni | 8V |
| Ubunjalo bokufaka isiginali | Umtjhini wokufaka endaweni: >2.1mA, kutjho bona VULA; Umtjhini wokungena endaweni: |
| I-hysteresis yokutjhugulula: 0.2ms | |
| Ubunjalo bokuphuma kwe-transistor | I-NPN yohlobo lwe-transistor emitter namkha i-collector evulekileko, umthamo wokutjhayela: umtjhini wokuphuma ≤20mA (1.2KΩ), umtjhini omkhulu wangaphakathi 100mA. Ifakwe ukuvikelwa kwamanje okufitjhani |
| Ukulawula okutjhugululiweko hlangana nesigaba esiphendukileko nesigaba esijayelekileko semiphumela ec | Lokha iswitjhi yokudayela i-K1 ise "VULWENI", i-ec yokuphuma ye-transistor isesigabeni esiphendukileko |
| Lokha iswitjhi yokudayela i-K1 ise-"OFF", i-ec yokukhipha i-transistor isesigabeni esijayelekileko | |
| Lokha i-K2 nayi- "VULA", isekhethi izokukhetha umsebenzi we-alamu ekhombisa ukukhanya okubomvu | |
| Ukutjengisa umsebenzi we-alamu yokukhanya | I-field input current >7mA, short-circuit alamu (SC), on-site input current |
| Inomboro yokufaka nokukhipha | 1 okufakwako 2 okuphumako |
| Iinsetjenziswa ezisebenzako | I-Dry contact nofana i-NAMUR proximity switch ngokuya kwezinga le-DIN 19234. |
| Ipharamitha yokutjhisa | Izinga lokutjhisa lokusebenza: -20°C~+60°C, izinga lokutjhisa lokugcina:-40°C~+80°C |
| Umswakama womoya | 10%~95%RH ngaphandle kokufiphala |
| Amandla we-dielectric | Phakathi kwehlangothi eliphephileko nelingaphephileko (≥ 3000VAC/min); hlangana nokuphakelwa kwamandla netheminali engaphephiko (≥ 1500VAC/min) |
| Ukujamelana nokuvikela | ≥100MΩ (phakathi kokufaka/ukukhipha/ukuphakelwa kwamandla) |
| Ubukhulu bangaphandle | Ubukhulu 12.5mm x ububanzi 108mm x ukuphakama 118mm |
| Ukukhambisana kwe-elekthromagnethi | Ngokuya nge-IEC 61326-1(GB/T 18268), i-IEC 61326-3-1 |
| Itshwayo elivikela ukuqhuma | [Exia Ga]IIC |
| Isitifiketi sokuphepha okusebenzako | I-SIL3 ngokuya ngamazinga we-IEC 61508 EN 61511 |
| Ihlangano yesitifiketi | I-CQST (i-China National Quality Supervision and Test Center of Explosion Protected Electrical Products) |
| Imingcele eqinisekisiweko (hlangana namatheminali 3-4) | Um=250V Uo=10.5V I=15mA Co=1.7μF Lo=150mH Po=39.4mW |
| Iimfuneko zendawo yokufaka | Ingahlanganiswa namathulusi ase-0 zone nge-IIA, IIB, IIC igesi eyingozi |
| MTBF | ≤100000h |
PHD-11TC-33A-23
PHD-12TF-288